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FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN
FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN

FDA59N30 Mosfet N-CH 300V 59A TO3PN, DIP, NPN

Product Specifications

Part Number FDA59N30
Availability In Stock
Base Product Number FDA59
Brand ONSEMI
Item Code FDA59N30
Maximum Power Dissipation 500W (Tc)
Mounting Type DIP
Pin Count 3
Transistor Type NPN

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Ground Floor, PLOT NO A-20 KH.NO. 7/2, PH-1 PREM NAGAR, PREM NAGAR, LANDMARK NEAR PNB ATM, HARSUKH BLK PREM NAGAR, New Delhi, North West Delhi, Delhi, 110086

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Product Details

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr onsemi Series UniFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 56mOhm @ 29.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4670 pF @ 25 V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 Base Product Number FDA59

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Ground Floor, PLOT NO A-20 KH.NO. 7/2, PH-1 PREM NAGAR, PREM NAGAR, LANDMARK NEAR PNB ATM, HARSUKH BLK PREM NAGAR, New Delhi, North West Delhi, Delhi, 110086

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