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Photo Transistor
Photo Transistor

Photo Transistor

Product Specifications

Availability In Stock
Breakdown Voltage 5 V
Collector Current 25 mA
Dark Current (Vce = 15 V) 100 nA Light Current (Vce = 5 V, H = 20 mW/cm): 20 nA Collector to Emitter
Dimension 15x8x4 inches
Fall Time (90 to 10%) 5 microS
Free Air Temperature 100 mW
Operating Temperature Range -40 to +85 Degrees C
Relative Humidity at 85 Degrees C 85% Power Dissipation at or below 25 Degrees C
Saturation Voltage 0.4 V Rise Time (10 to 90%): 5 microS
Soldering Temperature (1/16 inch from case for 5 sec) 240 Degrees C

GST No - 27AADPJ7898Q1ZM | Member since 2026

LANE-1, Kondhwa Budruk, Pune, Pune, Maharashtra, 411048

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Product Details

The phototransistor is a device that operates by converting incoming photons to electrons in the base of a bipolar transistor. As for any such transistor, the base current causes a larger collector-emitter current to flow, which is detected by a circuit.

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LANE-1, Kondhwa Budruk, Pune, Pune, Maharashtra, 411048

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